SEMICONDUCTOR LASER ELEMENT

摘要

PURPOSE:To realize a semiconductor laser element which is oscillated in a region from a blue color up to an ultraviolet color at a temperature of room temperature or higher. CONSTITUTION:An n-type Zn<0.91>Mg0.09S0.12Se0.88 clad layer 3 and a p-type Zn0.80Mg0.20S0.26Se0.74 clad layer 6 are bonded via an active layer of a multiple quantum well structure which is constituted of ZnSe quantum well layers 4 (thickness: 6nm each) in five layers and of Zn0.91Mg0.09S0.12Se0.88 barrier layers 5 (thickness: 8nm each) in four layers.