| 摘要 |
<p>PURPOSE: To provide an-anti fuse with a low leakage current and a constant low insulation breakdown voltage. CONSTITUTION: An anti-fuse 70 has a first metal layer 74 and a second metal layer 96 where an electricity is fed. A dielectric layer 92 is located between the metal layers 74 and 96 and Schottky barrier layers 86 and 94 are located between the dielectric layer 92 and at least one of metal layers 74 and 96, and they are formed by the sintering of a barrier metal layer that is a high- melting-point metal with a work function of essentially 4.5-5.5 eV and the dielectric layer, they minimizing the leakage current in the anti-fuse 70. Materials for forming the Schottky barriers 86 and 94 are selected appropriately and its operation is properly adjusted, thus obtaining a constant low insulation breakdown voltage. A semiconductor device manufacturing technique can be applied for manufacturing.</p> |
