发明名称 Low to microwave frequency hybrid semiconductor IC for e.g. CATV amplifier
摘要 The semiconductor IC having semiconductor devices and chip components is provided with a substrate (1), having an opening (1A), that is bonded onto a heat-sinking substrate (2) for mounting the chip components. A high thermally conductive base plate (3), e.g. of Kovar, is bonded to the heat-sinking substrate for mounting the semiconductor devices. A hollow cover (4) covers a space above the base plate, making an enclosure. The joint face between the base plate and the cover is hermetically sealed to hold a nitrogen atmosphere. Several interconnection leads (14) are formed through the cover and electrically connect circuits on the base plate and the substrate. A pair of interconnection leads (15) test operating signals in the semiconductor devices.
申请公布号 FR2720857(A1) 申请公布日期 1995.12.08
申请号 FR19950006358 申请日期 1995.05.30
申请人 FUJITSU LTD 发明人 FURUTANI NAGAHISA;FUKUDEN NOBUTOSHI
分类号 H01L23/13;H01L23/66;H01L25/16;H03F3/195;H05K1/02;H05K1/03;H05K1/11;H05K3/34;(IPC1-7):H01L25/16 主分类号 H01L23/13
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