| 摘要 |
<p>PURPOSE:To acquire a plasma processing method wherein the temperature of a sample substrate during plasma processing can be kept fixed, a high frequency voltage applied to a sample substrate can be monitored and deterioration of an electrostatic chuck can be prevented. CONSTITUTION:The title method is constituted so that a substrate is held on a mounting stand 4 whose temperature is controlled by an electrostatic chuck 1 which is formed of a conductor 1a and a dielectric 1b involving it and holds the substrate mounted on the dielectric 1b removably by using static electricity, and static electricity is generated by applying a voltage through the mounting stand 4 between the dielectric 1a and a sample substrate 2 when the sample substrate 2 is processed by plasma inside a vacuum container 3. Thereby, the temperature of a sample substrate during plasma processing can be kept fixed.</p> |
