| 摘要 |
PURPOSE:To manufacture, with good reliability, a device provided with high- degree quantum confinement by a method wherein a hollow provided with a plurality of walls extended into a substrate is formed on the surface of the substrate and differences in level are formed in the respective walls so as to partition small hollows whose size in the transverse direction is smaller than that of the hollow. CONSTITUTION:A changed groove 24 can be provided with a quantum device formed by the epitaxial growth of a semiconductor layer used to form a device structure. The semiconductor layer is made discontinuous due to differences in level 36, 38 formed on walls 20, 22. Thereby, a quantum wire can be grown directly in the region of the vertex 60 of a groove. The boundary of the vertex of the groove comes into contact with a barrier material, i.e., a substrate 1. Consequently, carriers inside the quantum wire are confined at high degree as compared with those which can be confined in a production process in conventional cases. |
