COMPLEMENTARY INSULATED GATE FIELD EFFECT TRANSISTOR,申请号JP19940136592-传众专利搜索

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发明名称	COMPLEMENTARY INSULATED GATE FIELD EFFECT TRANSISTOR
摘要
申请公布号	JPH07321220(A)	申请公布日期	1995.12.08
申请号	JP19940136592	申请日期	1994.05.25
申请人	NIPPONDENSO CO LTD	发明人	ABE RYUICHIRO
分类号	H01L27/092;H01L21/8238;(IPC1-7):H01L21/823	主分类号	H01L27/092
代理机构		代理人
主权项
地址

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