发明名称 DIRECTLY COPPER BONDED SUBSTRATE
摘要 PURPOSE: To provide a direct copper bonded substrate which eliminates warp caused by a temperature cycle with maintaining strength. CONSTITUTION: In the direct copper bonded substrate, which has copper layers respectively on both main surfaces of an electric insulating substrate. On one layer, patterns are formed gap apart from each other, and on another layer, cross section in the back side region of gaps is reduced to decrease tensile force which is generated on copper cross sections corresponding to the gaps. This suppress temperature cycle from generating force which distorts the substrate.
申请公布号 JPH07320542(A) 申请公布日期 1995.12.08
申请号 JP19950056704 申请日期 1995.02.21
申请人 PLESSEY SEMICONDUCTORS LTD 发明人 ROBAATO JIEIMUZU DEIKENSUN
分类号 H01B5/14;H01L23/373;H05K1/02;H05K1/03;H05K3/20;(IPC1-7):H01B5/14 主分类号 H01B5/14
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