发明名称 |
DIRECTLY COPPER BONDED SUBSTRATE |
摘要 |
PURPOSE: To provide a direct copper bonded substrate which eliminates warp caused by a temperature cycle with maintaining strength. CONSTITUTION: In the direct copper bonded substrate, which has copper layers respectively on both main surfaces of an electric insulating substrate. On one layer, patterns are formed gap apart from each other, and on another layer, cross section in the back side region of gaps is reduced to decrease tensile force which is generated on copper cross sections corresponding to the gaps. This suppress temperature cycle from generating force which distorts the substrate. |
申请公布号 |
JPH07320542(A) |
申请公布日期 |
1995.12.08 |
申请号 |
JP19950056704 |
申请日期 |
1995.02.21 |
申请人 |
PLESSEY SEMICONDUCTORS LTD |
发明人 |
ROBAATO JIEIMUZU DEIKENSUN |
分类号 |
H01B5/14;H01L23/373;H05K1/02;H05K1/03;H05K3/20;(IPC1-7):H01B5/14 |
主分类号 |
H01B5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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