| 摘要 |
PURPOSE:To provide a dynamic random access memory cell which can get high speed operation by making the capacitance of a bit line small. CONSTITUTION:A first semiconductor layer 11, a channel semiconductor layer 12, and a second conductive layer 13, which becomes the other of source and drain regions and besides becomes a storage node 26, too, are provided on a first impurity diffusion layer 24, which becomes one of the source and drain regions and besides becomes a bit line, too. A capacitor insulating layer 13 is provided on the second conductive layer 13. A cell plate 22 is provided on the storage node 26, with the capacitor insulating layer 13 between. |
