| 摘要 |
PURPOSE:To use a material having high dielectric constant for the capacitor dielectric film of a DRAM memory cell. CONSTITUTION:Contact holes 10a and 10b are opened severally in the BPSG film 10 made all over the surface of MOS transistors 5 and 12, and then the lower electrode 7 of a capacitor consisting of ruthenium dioxide or the like and a dielectric film 8 consisting of lead titanate or the like are formed severally in the contact hole 10, and thereon a conductive film of ruthenium dioxide or the like, where the upper electrode 9 of the capacitor and wiring 11 are united, is made. Hereby, heat treatment such as the reflow processing of a insulating film, the activation processing, etc. of contact implantation can be performed before formation of the capacitor of the memory cell, so the problem of the mutual diffusion of the capacitor does not occur. |
