| 摘要 |
<p>PURPOSE:To form a shallow pn junction and at the same time to form the Zn diffusion region of high concentration in the whole surface of a p-type diffusion layer. CONSTITUTION:An Al2O3 diffusion mask 16 is formed. on an n-GaAsP substrate 14. Next, a diffusion source film 10 comprising the mixed film of ZnO and SiO2 or a ZnO film is formed on a backing 14 exposed through the diffusion window 16a of the mask 16. Next, an AlN annealing cap film 20 is formed on the diffusion source film 10 and the surface 14a of the substrate 14, which is located on the opposite side to the film 10. After that, the substrate 14 is held and heated in the atmosphere of a nitrogen gas to diffuse Zn contained in the diffusion source film into the substrate 14, thereby forming a p-type diffusion layer 22.</p> |
