发明名称 SUBSTRATE CARRYING METHOD
摘要 PURPOSE:To prevent increase of an installation area of a processing device due to a large aperture of a substrate by executing a series of processes while keeping a normal of a substrate surface approximately horizontal and by holding a substrate in a process by electrostatic attraction force using electrostatic force. CONSTITUTION:A substrate 1 is carried to a substrate processing chamber 5 while being kept vertical by a substrate holding device 6 wherein electrostatic attraction force is used and is processed on a single-wafer basis. Since a foot print of a substrate processing device and a carrier system can be miniaturized and hardly changeable even an aperture of the substrate 1 is made large, the same device whose occupation area of a clean room is small can be used. Furthermore, since an electrostatic attraction method is used for holding a substrate, the device 6 does not need to be brought into contact with a substrate surface and a foreign matter hardly attaches.
申请公布号 JPH07321176(A) 申请公布日期 1995.12.08
申请号 JP19940106444 申请日期 1994.05.20
申请人 HITACHI LTD 发明人 TAKAHASHI NUSHITO
分类号 B65G49/07;C23C14/56;H01J37/20;H01J37/317;H01L21/265;H01L21/677;H01L21/683;(IPC1-7):H01L21/68 主分类号 B65G49/07
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