发明名称 Verfahren zum Züchten eines Kristalls.
摘要 <p>A crystal growth method for crystallizing an amorphous thin film comprises heat-treating an amorphous thin film having a region (I) with a predetermined film thickness and a region (II) with a larger film thickness than the region (I) and having a sufficiently small area so as to form only a single nucleus from which a single crystal is grown by solid phase growth at a temperature not higher than the melting point of the film.</p>
申请公布号 DE69114162(D1) 申请公布日期 1995.12.07
申请号 DE1991614162 申请日期 1991.04.05
申请人 CANON K.K., TOKIO/TOKYO, JP 发明人 KUMOMI, HIDEYA, C/O CANON KABUSHIKI KAISHA, OHTA-KU, TOKYO, JP
分类号 C30B1/02;C30B25/18;H01L21/20;(IPC1-7):C30B1/02 主分类号 C30B1/02
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