<p>A crystal growth method for crystallizing an amorphous thin film comprises heat-treating an amorphous thin film having a region (I) with a predetermined film thickness and a region (II) with a larger film thickness than the region (I) and having a sufficiently small area so as to form only a single nucleus from which a single crystal is grown by solid phase growth at a temperature not higher than the melting point of the film.</p>
申请公布号
DE69114162(D1)
申请公布日期
1995.12.07
申请号
DE1991614162
申请日期
1991.04.05
申请人
CANON K.K., TOKIO/TOKYO, JP
发明人
KUMOMI, HIDEYA, C/O CANON KABUSHIKI KAISHA, OHTA-KU, TOKYO, JP