发明名称 |
PLASMA TREATMENT AND APPARATUS IN ELECTRONIC DEVICE MANUFACTURE |
摘要 |
In the manufacture of a large-area electronic device such as a large-area liquid-crystal display device with thin-film address and drive circuitry, a plasma treatment is carried out on a device substrate (4) which is mounted on a supporting electrode (11) facing a perforated gas-feeding electrode (12). A reactive plasma (5) is generated in a space between the electrodes (11, 12) from a mixture of reaction gases which is fed into the space through at least the perforated electrode (12). The mixture of gases comprises a first reaction gas (e.g. SiH4) which is depleted at a faster rate in the plasma treatment than a second reaction gas (e.g. N2). Through an area (12b) of the perforated electrode, one or more second supply lines (22) feeds a secondary mixture which is richer in the first reaction gas than a primary mixture supplied by a first supply line (21). This arrangement permits the plasma treatment to be carried out more uniformly over the area of the supporting electrode (11). |
申请公布号 |
WO9533082(A2) |
申请公布日期 |
1995.12.07 |
申请号 |
WO1995IB00270 |
申请日期 |
1995.04.18 |
申请人 |
PHILIPS ELECTRONICS N.V.;PHILIPS NORDEN AB;PHILIPS ELECTRONICS UK LIMITED |
发明人 |
GOODYEAR, ANDREW, LEONARD;FRENCH, IAN, DOUGLAS |
分类号 |
C23C16/50;C23C16/44;C23C16/455;C23C16/509;C23F4/00;G02F1/1362;H01L21/205;H01L21/302;H01L21/3065;H01L21/31 |
主分类号 |
C23C16/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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