An intermediate layer (2) is deposited on a substrate (1) and a semiconductor layer (3) is grown on the intermediate layer. The intermediate layer (2) is lattice-matched with the semiconductor layer (3) and thus acts as a nucleation layer. The intermediate layer (2) can advantageously be formed from a silicide and can thus also, owing to its electrical conductivity, be used as an electrode, for example in a solar cell structure.
申请公布号
DE4419080(A1)
申请公布日期
1995.12.07
申请号
DE19944419080
申请日期
1994.05.31
申请人
MAX-PLANCK-GESELLSCHAFT ZUR FOERDERUNG DER WISSENSCHAFTEN E.V. BERLIN, 80539 MUENCHEN, DE
发明人
WERNER, JUERGEN, 70197 STUTTGART, DE;BERGMANN, RALF, 70565 STUTTGART, DE