发明名称 Semiconductor device for photovoltaic solar cell
摘要 An intermediate layer (2) is deposited on a substrate (1) and a semiconductor layer (3) is grown on the intermediate layer. The intermediate layer (2) is lattice-matched with the semiconductor layer (3) and thus acts as a nucleation layer. The intermediate layer (2) can advantageously be formed from a silicide and can thus also, owing to its electrical conductivity, be used as an electrode, for example in a solar cell structure.
申请公布号 DE4419080(A1) 申请公布日期 1995.12.07
申请号 DE19944419080 申请日期 1994.05.31
申请人 MAX-PLANCK-GESELLSCHAFT ZUR FOERDERUNG DER WISSENSCHAFTEN E.V. BERLIN, 80539 MUENCHEN, DE 发明人 WERNER, JUERGEN, 70197 STUTTGART, DE;BERGMANN, RALF, 70565 STUTTGART, DE
分类号 H01L31/0224;H01L31/0392;H01L31/068;H01L31/18;(IPC1-7):H01L31/039;H01L27/12;H01L31/035;G09F9/33;H01L31/022 主分类号 H01L31/0224
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