Mfg. MIS FET with semiconductor substrate or trough

摘要

A first zone of first conductivity is formed in a semi-conductor substrate, or trough with impurities. A source and a drain zone has impurities, forming opposite conductivity and deposited in the first zone with mutual spacing. A gate electrode is formed above the first zone between the source and drain. The semiconductor component has a channel doping structure for impurity introduction into the first zone between the source and drain. First the distribution characteristic of impurity densities is determined over the first zone depth, taking implanted ions as parameters. Next gate voltage changes are detected, and ions implanted to form a MISFET.