Photodetector with circuit controlling CCD electrodes

摘要

A CCD photodetector includes a substrate made of a first semiconductor type, a drain formed in the substrate being of a second semiconductor type. It is designed for a wide dynamic range and high sensitivity at low light levels and high speed, e.g. high output voltage change rate, linear reactivity and high detection (test) sensitivity in a non-compressed operating range at low light level and with a linear reaction and low detection sensitivity in a compressed operating zone at high light level. An accumulating well formed in the substrate is of a second semiconductor type and is enabled to operate in conjunction with a photosensitive zone. A resistor, with a controlled value of resistance is connected between the well and the drain.