| 摘要 |
PURPOSE:To obtain a resin pattern for optical parts having excellent heat and chemical resistance by forming a mask pattern of a prescribed shape consisting of a resin which absorbs exposing wavelength on a substrate and forming a thin photosensitive resin film layer having curability with the exposing wavelength onto the substrate and resin mask pattern, then exposing the same from the substrate side. CONSTITUTION:A resist pattern 12 is formed by using resist having high absorption to far-UV light onto the quartz substrate 11. A photoresist is coated to 0.5mum thickness on the substrate and is subjected to 30min of prebaking at 85 deg.C. The resist is exposed at 100mJ by using far-UV light of 430nm wavelength and is developed for 1min by using a developing soln., by which the desired resin pattern is completed. A photosensitive Si resin 13 such as, for example, phenyl Si resin, which does not have a thermosetting property is coated on the formed resist pattern 12 to 2mum thickness. The resin is further subjected to far-UV light exposing from the substrate 11 side by using a mask aligner PLA521FA. |
