PROCESS FOR FABRICATING INTRINSIC LAYER AND APPLICATIONS.

摘要

PCT No. PCT/US93/04782 Sec. 371 Date Nov. 18, 1994 Sec. 102(e) Date Nov. 18, 1994 PCT Filed May 20, 1993 PCT Pub. No. WO93/24954 PCT Pub. Date Dec. 9, 1993A method of simultaneously forming a gallium arsenide p-i-n structure having p, i, and n regions, which includes heating to dissolve gallium arsenide in a solvent such as bismuth or gallium to form a saturated solution of gallium arsenide in the solvent, contacting the solution with a gaseous mixture, which mixture includes hydrogen, water vapor and products of reactions between the hydrogen and the water vapor with the solvent and with silicon dioxide, to form a contacted solution, coating a suitably selected substrate, such as a group III-V compound such as gallium arsenide, with the contacted solution, cooling the coated substrate to precipitate gallium arsenide from the contacted solution onto the substrate, and removing the substrate coated with a layer of gallium arsenide having a p-i-n structure which constitutes the product having an i region dopant concentration of less than about 1012 cm-3.