| 发明名称 |
Procedeu de obtinere a straturilor InP |
| 摘要 |
FIELD: semiconductor engineering; producing pure InP layers with high reproducible electrophysical parameters. SUBSTANCE: method involves preliminary thermal annealing of indium in vacuum to obtain InP layers by epitaxial growth in ln-PCl-Hsystem. EFFECT: reduced level of uncontrolled doping and time required to obtain of layers with reproducible electrophysical parameters. 1 cl |
| 申请公布号 |
MD940147(A) |
申请公布日期 |
1995.11.30 |
| 申请号 |
MD19940000147 |
申请日期 |
1994.05.24 |
| 申请人 |
UNIVERSITATEA DE STAT DIN MOLDOVA |
发明人 |
BOTNARIUC VASILE;DIACONU ION;GORCEAC LEONID;RAEVSCHI SEMION;PLESCA VALENTIN |
| 分类号 |
H01L21/205;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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