发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To prevent scaling off of the electrode metallic film, by inserting metallic or semi-metallic corrgate film between the insulation film and the electrode metallic film, when forming the electrode metallic film on the insulation film of the semiconductor substrate surface.</p>
申请公布号 JPS5429562(A) 申请公布日期 1979.03.05
申请号 JP19770095312 申请日期 1977.08.08
申请人 NIPPON ELECTRIC CO 发明人 KOGURE NAOSHI
分类号 H01L21/60;H01L23/48 主分类号 H01L21/60
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