发明名称 |
Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices, and methods of fabricating same |
摘要 |
Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices are obtained by forming an amorphous silicon carbide termination region in a monocrystalline silicon carbide substrate, at a face thereof, adjacent and surrounding a silicon carbide device. The amorphous termination region is preferably formed by implanting electrically inactive ions, such as argon, into the substrate face at sufficient energy and dose to amorphize the substrate face. The device contact or contacts act as an implantation mask to provide a self-aligned termination region for the device. The terminated devices may exhibit voltage breakdown resistance which approaches the ideal value for silicon carbide. |
申请公布号 |
AU2431395(A) |
申请公布日期 |
1995.11.29 |
申请号 |
AU19950024313 |
申请日期 |
1995.05.02 |
申请人 |
NORTH CAROLINA STATE UNIVERSITY |
发明人 |
BANTVAL JAYANT BALIGA;DEV ALOK |
分类号 |
H01L21/04;H01L21/265;H01L21/329;H01L29/06;H01L29/24;H01L29/47;H01L29/861;H01L29/872 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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