| 摘要 |
<p>PURPOSE:To prevent an unequal display by projecting and extending drain electrodes from picture element electrodes, projecting and extending source electrodes from a a source bus in parallel with the drain electrodes and projecting and extending gate electrodes from a gate bus in such a manner that said electrodes overlap partly on the drain electrodes and the source electrodes in the projecting and extending direction thereof and overlap fully thereon in the direction perpendicular thereto. CONSTITUTION:The drain electrodes 15a of respective thin film transistors 16 are projected and extended from the picture element electrodes 15 and the source electrodes 19a are projected and extended from the source bus 19 in nearly parallel with the respective drain electrodes 15a thereof. The gate electrodes 23 are projected and extended from the gate bus 18 in such a manner that said electrodes overlap partly on these drain electrodes 15a and source electrodes 19a in the projecting and extending direction and fully thereon in the direction perpendicular to said projecting and extending direction. The respective overlap areas of the gate electrodes 23 as well as the drain electrodes 15a and the source electrodes 19a do not, therefore, change even if the length of the gate bus 19 is elongated or contracted in the longitudinal direction by, for example, a temp. fluctuation of a pattern mask. The fluctuation in the characteristics of the thin film transistors is thus obviated. The unequal display is thereby prevented.</p> |
