| 摘要 |
<p>PURPOSE:To obtain a thin film transistor(TFT) panel which has no TFT entering an invariably driven state by connecting a picture element electrode not to a TFT where the drain and source electrodes or gate and source electrodes are short-circuited, but to only a TFT which has no short circuit. CONSTITUTION:Plural TFTs T are formed on a substrate surface corresponding to the formation positions of a respective picture elements, and an insulating film which covers data lines DL and gate lines GL connecting with the drain electrodes D and gate electrodes G of the respective TFTs while the picture element electrode connection parts Sa of the source electrodes 5 of the TFTs T are exposed is formed on the substrate surface. Then the transistor formation area of the substrate is etched electrolytically to remove the picture element electrode connection part of the TFT T whose source electrode 5 is short- circuited to the drain electrode D or gate electrode G and then the end part of the picture element electrode is formed overlapping with the picture element electrode connection part Sa of each TFT. Consequently, the TFT panel which does not include the TFT entering the invariably driven state is obtained.</p> |
