| 摘要 |
<p>An overcurrent protective circuit in which the source of an N-type depletion MOS (1) is connected to the source of a P-type depletion MOS (2), the gate of the N-type depletion MOS (1) to the drain of the P-type depletion MOS (2) through a resistor and others, and the gate of the P-type depletion MOS (2) to the drain of the N-type depletion MOS (1) through a resistor and others. A semiconductor circuit to which such an overcurrent protective circuit is parallely connected through a rated value correcting circuit. Also, this invention provides an overcurrent cut-off circuit which operates, fundamentally, on the same cut-off principle as that of the above-mentioned overcurrent protective circuit and which is constituted of an enhancement MOS. Then, by so arranging the gate circuit that the gate voltage does not become greater than a certain value, the overcurrent is suppressed to approximately 1.5 to 2 times the rated current, thus effectuating the cut-off. <IMAGE></p> |
