发明名称 Method for manufacturing bump leaded film carrier type semiconductor device.
摘要 An insulating film (3) has conductive layers (6) on a first surface (S1) and conductive protrusions (9) on a second surface (S2). The conductive layers (6) are connected to the conductive protrusions (9) via through holes provided in the insulating film. A semiconductor chip (1) having pads (2) is adhered by an adhesive layer (22) to the insulating film (3). Then, the conductive layers (6) are locally pressured, so that the conductive layers (6) are electrically connected to respective ones of the pads (2).
申请公布号 EP0684644(A1) 申请公布日期 1995.11.29
申请号 EP19950108029 申请日期 1995.05.24
申请人 NEC CORPORATION 发明人 KATA, KEIICHIRO;MATSUDA, SHUICHI;HAGIMOTO, EIJI
分类号 H01L21/60;H01L23/12;H01L23/31;H01L23/498 主分类号 H01L21/60
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