| 摘要 |
A method produces a capacitor. On a substrate, a first polysilicon layer is formed over an insulating region. A metal-silicide layer is formed on top of the first polysilicon layer. A dielectric layer is formed on top of the metal-silicide layer. A second polysilicon layer is formed on top of the dielectric layer. The second polysilicon layer and the dielectric layer are etched to form a top electrode and dielectric region. The metal-silicide layer and the first polysilicon layer are etched to form a bottom electrode.
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