| 摘要 |
PURPOSE:To obtain a pattern forming material capable of controlling to an arbitrary mol.wt., having satisfactory exposure sensitivity even to UV and far UV, minimizing the reduction of the intensity of light, not causing the unstabilization of the degree of vacuum in a vacuum process during the production of a wafer, the contamination of a process atmosphere or the deceleration of dissolution of a polymer, eliminating the instability of patterning and suitable for use as a pattern forming material used in the production of super-LSI, etc. CONSTITUTION:A narrow-dispersed hydroxystyrene polymer contg. polymerizable units represented by the formula and having a mol.wt. distribution (wt. average mol.wt. number average mol.wt.) of 1.0-1.4 is blended with an optical acid generating agent, an acid crosslinking agent, and an org. solvent to produce the objective negative type pattern forming material. In t.he formula, R is H or 1-4C lower alkyl such as methyl or ethyl. |
