| 摘要 |
PURPOSE:To access at high speed and to stabilize operation in an access time of BiCMOS static RAM by canceling variation of threshold value voltage of a MOSFET by current mirror coupling. CONSTITUTION:Loads P1, P2 of a current switch circuit CS and P3, P4, P6, P7 constituting a level conversion circuit LVC 1, 2 are made a current mirror form through first and second emitter follower circuits respectively, a load N1 of the circuit LVC 1 and a load N7 of a circuit LVC 2, and a corresponding load N2 and a constant current source N3, a load N8 and a constant current source N9 are made a current mirror form through a third emitter follower circuit. Thereby, sizes of P3, P4, P6, P7, N'', N3, N8 and N9 are enlarged same as transistors T2, T5 and T6 in accordance with a DC current amplification factor of TA, its driving capability is improved, a transmission time as an unit X address buffer UXBO is shortened, variation of threshold value voltage is canceled, then operation can be stabilized. |
