发明名称 |
Method for forming a silicide using ion beam mixing |
摘要 |
An improved method is provided for fabricating a metal silicide upon a semiconductor substrate. The method utilizes ion beam mixing by implanting germanium to a specific elevation level within a metal layer overlying a silicon contact region. The implanted germanium atoms impact upon and move a plurality of metal atoms through the metal-silicon interface and into a region residing immediately below the silicon (or polysilicon) surface. The metal atoms can therefore bond with silicon atoms to cause a pre-mixing of metal with silicon near the interface in order to enhance silicidation. Germanium is advantageously chosen as the irradiating species to ensure proper placement of the germanium and ensuing movement of dislodged metal atoms necessary for minimizing oxides left in the contact windows and lattice damage within the underlying silicon (or polysilicon).
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申请公布号 |
US5470794(A) |
申请公布日期 |
1995.11.28 |
申请号 |
US19940200628 |
申请日期 |
1994.02.23 |
申请人 |
ADVANCED MICRO DEVICES |
发明人 |
ANJUM, MOHAMMED;BURKI, IBRAHIM K.;CHRISTIAN, CRAIG W. |
分类号 |
H01L21/265;H01L21/285;H01L21/336;(IPC1-7):H01L21/283 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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