发明名称 |
Method for forming an oxide film of a semiconductor |
摘要 |
In a method for forming a compound oxide film such as a gate oxide film of a MOS device, after a first oxide film (such as a HTO film) is formed on a semiconductor substrate by deposition at a high temperature, a second oxide film is formed below the first oxide film by wet oxidizing the surface of the semiconductor substrate, which results in a compound oxide film consisting of the HTO film and the wet oxide film. Therefore, a high quality oxide film having excellent electrical characteristics can be formed.
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申请公布号 |
US5470611(A) |
申请公布日期 |
1995.11.28 |
申请号 |
US19940338816 |
申请日期 |
1994.11.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YANG, CHANG-JIP;JUNG, JUN-GYO |
分类号 |
H01L21/31;C23C16/40;C23C28/04;H01L21/28;H01L21/316;H01L29/51;(IPC1-7):C23C16/40 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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