| 摘要 |
<p>PURPOSE:To obtain a transmission type LCD device of single crystal silicon substrate featuring excellent field effect electron mobility and high performance, and reduce the cost by producing the device by the conventional LSI production techniques. CONSTITUTION:Epitaxial layer (polycrystalline epitaxial layer) 13P of a polycrystalline part is formed in the region where the pixel-opened part is formed on a single crystal silicon(Si) substrate 11 and epitaxial layer (single crystal epitaxial layer) 13C of single crystal part is formed in the other region. The single crystal epitaxial layer 13C is then provided with switching transistor 14 and the polycrystalline epitaxial layer 13P is moved. Embedment layer 17 consisting fo a translucent resin is formed in the part where the layer is moved. Grinding and polishing are then executed from the rear surface side of the single crystal Si substrate 11 and etching is executed, at need, to expose the rear surface side of the embedment layer 17 to form single crystal Si stand 21 of the single crystal part epitaxial layer 13C is formed. The rear surface side is thereafter stuck to a color filter substrate or lower glass substrate with a transparent adhesive.</p> |
