| 摘要 |
<p>PURPOSE: To provide a semiconductor device wherein manufacturing cost is reduced, manufacturing is facilitated and system efficiency is improved, by forming an electrode of a single layer, after a diffusion region is diffused in a multiple contact wherein heavily doped parts and lightly doped parts are formed in a compound manner. CONSTITUTION: This device consists of the following; a heavily doped silicon substrate 3 and a lightly doped silicon substrate 4 which are formed in order and have a first conductivity type, a lightly doped well 10 formed by diffusing impurities of a conductivity type opposite to the first conductivity in the upper part of the lightly doped silicon substrate 4, a heavily doped well 6 formed by selectively diffusing impurities having the same conductivity type in the upper part of the lightly doped well 10, in the same position as the lightly doped well 10, an anode 1 formed above the lightly doped well 10 and the heavily doped well 6, and a cathode 2 formed under the heavily doped substrate 3.</p> |
