发明名称 |
Dual-channel emitter switched thyristor with trench gate |
摘要 |
A semiconductor switching device includes a plurality of adjacent and parallel-connected switching cells in a semiconductor substrate. Each cell includes a thyristor having a floating emitter region and a trench-gate field effect transistor (TFET) for providing turn-on and turn-off control of the thyristor. In one embodiment of the switching device, parasitic thyristor latch-up is suppressed by using a dual-channel TFET which forms both inversion-layer and accumulation-layer channel connections in series between respective floating emitter regions and the cathode contact. In another embodiment, parasitic thyristor latch-up is prevented by joining floating emitter regions of a pair of adjacent cells to thereby eliminate a parasitic P-N-P-N path between the anode and cathode contacts. According to this second embodiment, a dual-channel TFET is preferably used to form a separate first conductivity type inversion-layer channel adjacent a first sidewall of the trench and a second conductivity type inversion-layer channel adjacent a second opposing sidewall of the trench. These channels provide the necessary electrical connections for both gated turn-on and turn-off control.
|
申请公布号 |
US5471075(A) |
申请公布日期 |
1995.11.28 |
申请号 |
US19940249898 |
申请日期 |
1994.05.26 |
申请人 |
NORTH CAROLINA STATE UNIVERSITY |
发明人 |
SHEKAR, MALLIKARJUNASWAMY S.;BALIGA, B. JAYANT;KOREC, JACEK |
分类号 |
H01L29/08;H01L29/745;H01L29/749;(IPC1-7):H01L29/74;H01L31/111 |
主分类号 |
H01L29/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|