发明名称 Sputtering apparatus
摘要 A sputtering apparatus in which transfer of a substrate and formation of a thin film on the substrate are performed in a face-up manner, the apparatus comprising a cylindrical shield member provided so as to surround a plasma discharge space in a substantially tightly enclosing state, and a process gas inlet means having gas outlet openings formed in an inner surface thereof. The cylindrical shield member is provided in its inside with a ring-like or cylindrical path so as to communicate with the process gas inlet means and so as to have a plurality of gas outlet openings. Further, a hole for inserting a pressure gauge is formed in the inner surface of the shield member.
申请公布号 US5470451(A) 申请公布日期 1995.11.28
申请号 US19940249271 申请日期 1994.05.25
申请人 ANELVA CORPORATION 发明人 KOBAYASHI, MASAHIKO;TAKAHASHI, NOBUYUKI
分类号 C23C14/34;H01J37/32;H01J37/34;(IPC1-7):C23C14/34;C23C14/52;C23C14/54 主分类号 C23C14/34
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