| 摘要 |
PURPOSE:To obtain a pattern forming material capable of arbitrary controlling an mol.wt., satisfactory even to UV and far UV, minimizing the reduction of the intensity of light, not causing the unstabilization of the degree of vacuum in a vacuum process during the production of a wafer, the contamination of a process atmosphere or the deceleration of dissolution of a polymer, eliminating the unstableness of patterning and suitable for a pattern forming material used in the production of super-LSI, etc. CONSTITUTION:This pattern forming material is based on a narrow-dispersed polymer represented by the formula and having a mol.wt. distribution (wt. average mol.wt./number average mol.wt,.) of 1.0-1.4. In the formula, R is H or methyl, each of (m) and (n) is a positive number and m+n=1. |
