| 摘要 |
PURPOSE: To improve yield and quality of a fine device of dissolution wafer process, and increase the degree of freedom of design, by arranging an etching control seal around the periphery of fine structure. CONSTITUTION: An etching control seal 20 whose both surfaces are surrounded by trenches 22 and 24 surrounds fine structure 12 and the periphery of the whole part of a trench 14 defining the fine structure 12 and stretches. The seal 20 is provided with a flat ring which rises to the upside of the left part of a surface 11 of a substrate 10 which is much doped as far as the same degree as the rising region 16 of the fine structure 12. Time seal 20 prevents dissolution etching permeates into a gap between the fine structure 12 and a substrate 18, until the final stage of dissolution of the substrate 10. When etching dissolves a surface under the trenches 14 and 22 and passes, selective etching comes into contact only with the fine structure 12 and the region 16. The seal 20 similarly prevents etching fluid from flowing in a part between coupling of the substrates 10 and 18 during dissolution of the substrate 18.
|
