| 摘要 |
Tungsten is grown only within a viahole 10. The upper surface of the tungsten layer 3 is made lower than the upper surface of a silicon oxide film 2. Thereafter, a titanium film 4 and a titanium nitride film 5 are formed by sputtering, and an aluminum alloy film 6 is formed by the sputtering while a silicon substrate 1 is heated to the temperature of 400 through 550 degrees Centigrade. Since the thickness of the tungsten layer 3 is thinner than the depth of the viahole 10, the upper layer wiring cannot be shorted by the tungsten layer 3. Further, since the viahole which remains not completely filled by the tungsten is completely filled with the tungsten layer 3 and the aluminum alloy film 6, no wire disconnection cannot occur in the viahole 10.
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