发明名称 ELECTRON-BEAM EXPOSURE MASK, ITS MANUFACTURE AND ELECTRON-BEAM EXPOSURE METHOD
摘要 <p>PURPOSE:To form the pattern of good accuracy even when a charged-particle transmission part contains a pattern which is formed to be island-shaped or peninsula-shaped. CONSTITUTION:In an electron-beam exposure mask which forms a pattern by one shot, electron-beam shielding patterns 21 which shield chanrged particles and a plurality of opening parts 22, 23, 26 which are arranged in lines along peripheral edges of the charged-particle shielding patterns 21 so as to sandwich beams 24, 25, 27 are contained.</p>
申请公布号 JPH07312341(A) 申请公布日期 1995.11.28
申请号 JP19950020786 申请日期 1995.02.08
申请人 FUJITSU LTD;FUJITSU VLSI LTD 发明人 SAKAKIBARA TAKAYUKI;YAMAZAKI SATORU;SAGO SATORU;SAKAMOTO JUICHI;YASUDA HIROSHI
分类号 C23F1/00;G03F1/20;G03F1/76;G03F1/78;H01L21/027;(IPC1-7):H01L21/027;G03F1/16;G03F1/08 主分类号 C23F1/00
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