发明名称 |
EEPROM cell with isolation transistor and methods for making and operating the same |
摘要 |
An EEPROM cell (40) includes a floating gate transistor (47) and an isolation transistor (45). Both a floating gate (48) and an isolation gate (46) are formed on a tunnel dielectric (44) within the cell. The isolation gate is coupled to a doped source region (52) of the floating gate transistor. The isolation transistor is not biased during a program operation of the cell, enabling a thin tunnel dielectric (less than 120 angstroms) to be used beneath all portions of both gates within the cell. Thus, the need for both a conventional tunnel dielectric and a gate dielectric is eliminated. The cell tolerates over-erasure, can be programmed at low programming voltages, and has good current drive due to the thin tunnel dielectric throughout the cell.
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申请公布号 |
US5471422(A) |
申请公布日期 |
1995.11.28 |
申请号 |
US19940225868 |
申请日期 |
1994.04.11 |
申请人 |
MOTOROLA, INC. |
发明人 |
CHANG, KO-MIN;SHUM, DANNY P.;CHANG, KUO-TUNG |
分类号 |
G11C17/00;G11C16/04;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C11/34;H01L29/68 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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