发明名称 |
Method of manufacturing a floating gate memory device |
摘要 |
A gate oxide film is formed on a surface of a semiconductor substrate. A tunnel insulating film having a thickness smaller than that of the gate insulating film is formed in a portion thereof corresponding to a tunnel region. A first silicon film having a low impurity concentration is formed on the gate insulating film. A second silicon film having an impurity concentration higher than that of the first silicon film is formed on the first silicon film so as to be connected thereto. A third silicon film is formed on the second silicon film through an insulating film. The second and third silicon films are formed into floating and control gates, respectively, thereby forming a semiconductor memory device.
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申请公布号 |
US5470771(A) |
申请公布日期 |
1995.11.28 |
申请号 |
US19910658773 |
申请日期 |
1991.02.21 |
申请人 |
NIPPONDENSO CO., LTD. |
发明人 |
FUJII, TETSUO;SAKAI, MINEKAZU;KUROYANAGI, AKIRA |
分类号 |
H01L21/28;H01L21/8247;H01L27/115;H01L29/788;(IPC1-7):H01L21/321;H01L21/824 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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