发明名称 Semiconductor memory device having address transition and supply voltage detecting circuits
摘要 A ROM includes an address transition detection circuit and a supply voltage rising detection circuit. The supply voltage rising detection circuit inhibits an operation of the address transition detection circuit until a supply voltage reaches a predetermined voltage after application of power.
申请公布号 US5471432(A) 申请公布日期 1995.11.28
申请号 US19940181487 申请日期 1994.01.13
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 MAKIHARA, HIROYASU
分类号 G11C11/41;G11C8/18;G11C11/413;(IPC1-7):G11C8/00 主分类号 G11C11/41
代理机构 代理人
主权项
地址