| 摘要 |
forming an insulating layer on the semiconductor substrate and forming a contact hole by selectively etching the insulating layer; forming a barrier metal on the insulating layer and the contact hole; remaining the barrier metal in the contact hole by etching the barrier metal; remaining tungsten on the barrier metal remained on the contact hole by dry etching the tungsten; forming metal for distribution on the insulating layer and the tungsten; and making the distribution by selectively etching the metal for distribution.
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