| 发明名称 |
STRUCTURE OF PHOTO DIODE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
The method comprises the steps of forming a Al electrode and an Al2O3 electrode barrier layer in a semiconductor substrate; and forming a photoconductive layer and a clear conductive film in the electrode barrier layer.
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| 申请公布号 |
KR950014286(B1) |
申请公布日期 |
1995.11.24 |
| 申请号 |
KR19930001491 |
申请日期 |
1993.02.04 |
| 申请人 |
LG ELECTRONICS CO., LTD. |
发明人 |
HUH, CHANG - U;PARK, YOUNG - HO |
| 分类号 |
H01L31/102;(IPC1-7):H01L31/102 |
主分类号 |
H01L31/102 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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