A method of manufacturing monolithic integrated circuits.

摘要

A method is disclosed wherein monolythic integrated circuit undergo a so-called aluminum annealing process step and so-called passivation step carried out within a deposition reactor of the PECVD type at a temperature of 420 DEG to 450 DEG C and a pressure of 1 to 1.5 Torr. Application of this method results in an increased electrical yield of the circuits produced and a reduction of their manufacturing costs.