| 摘要 |
A Power Integrated Circuit ("PIC") structure comprises a lightly doped semiconductor layer (2;2',2'') of a first conductivity type, superimposed over a heavily doped semiconductor substrate (3) of the first conductivity type, wherein a power stage and a driving and control circuitry comprising first conductivity type-channel MOSFETs and second conductivity type-channel MOSFETs are integrated; the first conductivity type-channel and the second conductivity type-channel MOSFETs are obtained inside second conductivity type and first conductivity type well regions (15,14), respectively, which are included in at least one isolated lightly doped region of the first conductivity type completely surrounded and isolated from the lightly doped layer (2;2',2'') of the first conductivity type by means of a respective isolation region (12,13) of a second conductivity type. <IMAGE> |
