| 摘要 |
A plasma-etching method and an apparatus therefor are provided, in which microwaves are introduced and a high frequency electric fields generated thereby is pulse-modulated by a signal of a frequency higher than about 10 kHz for producing the plasmas for etching a wafer. The pulse modulation of the high frequency electric fields may be performed with a pulse interval time shorter than about 10 mu s. The radical production ratio in ECR plasmas, ion temperature and charge accumulation can be controlled thereby enabling the etching performance at a high precision.
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