| 摘要 |
PURPOSE: To grow the epitaxial layer of silicon or silicon alloy selectively on a semiconductor substrate at relatively low temperature, by growing the epitaxial layer on the substrate after forming the mask layer of the oxide of a specified element. CONSTITUTION: The film mask 11 of the oxide of an element being selected from the group of scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, samarium, europium, cadmium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium is made on a wafer 10. The adhesion of the oxide is performed by sputtering. Next, an epitaxial layer 12 of silicon or the like is grown on the wafer 10, using the patterned oxide mask layer 11. At that time, the epitaxial layer 12 is grown on the wafer 10 at a temperature lower than 650 deg.C, but it is not grown on the mask layer 11.
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