发明名称 FORMING METHOD OF PHOTORESIST FILM
摘要 PURPOSE:To form a window section of a photoresist film at an accurate place. CONSTITUTION:The whole surface of a substrate 21 containing a partially protruded trapezoidal sectional semiconductor element 22 on a substrate 21 is coated with a photoresist film 24, and a window is made on the photoresist film 24 through exposure in width size wider than approximately the base of the semiconductor element 22. The photoresist film 24 remaining with the exception of the window section 29 is swollen by exposing the photoresist film 24 in a methyl ethyl ketone atmosphere, and made to creep on the inclined plane 28 of the semiconductor element 22, made to reach the periphery of the top face 27 of the semiconductor element 22 and cured through heating, thus exposing only the top face 27 of the semiconductor element 22.
申请公布号 JPH07307267(A) 申请公布日期 1995.11.21
申请号 JP19940099519 申请日期 1994.05.13
申请人 NEC KANSAI LTD 发明人 TANIGUCHI YOSHITAKA
分类号 G02F1/1345;G03F7/26;H01L21/027;(IPC1-7):H01L21/027;G02F1/134 主分类号 G02F1/1345
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