发明名称 NONHYSTERETIC SUPERCONDUCTING TWO-PORT RANDOM-ACCESS MEMORY CELL
摘要 PURPOSE: To obtain a memory cell using a non-hysteretic superconductive quantum interference device(SQUIDs). CONSTITUTION: When a write signal is high, a current does not flow in a control inductor of a write SQUID 80 and the write SQUID becomes superconductive so that a data input signal is passed through an input data terminal 92. At this time, if an input data signal is high, a SQUID 88 becomes resistant and a cell status terminal 90 becomes a high voltage of a voltage Vjj. If an input data signal is low, the status terminal 90 becomes an earth potential. Thus, the status terminal 90 depends on a status of the input data signal on the input data terminal. In reading out from the cell status terminal 90, a data signal held from a cell is transferred to an output load resistor 94 by inputting the readout signal to a control inductor of a SQUID 84.
申请公布号 JPH07307092(A) 申请公布日期 1995.11.21
申请号 JP19950107438 申请日期 1995.05.01
申请人 TRW INC 发明人 NIIRU JIYOSHIYUA SHIYUNAIAA;JIERARUDO ROBAATO ITSUSHIYAA;ROJIYAA ARUBUAANAZU DEIBUITSUDOHAIZAA;JIYOOJI AARIN ABUERA
分类号 G11C11/44;H03K19/195;(IPC1-7):G11C11/44 主分类号 G11C11/44
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