MEMORY DEVICE AND METHOD FOR WRITING INFORMATION THEREIN

摘要

PURPOSE:To easily design a circuit by a method wherein a transistor having the same structure as that of the transistor of a memory cell is used for the transistor constituting a line address signal conductor driver. CONSTITUTION:A line address signal conductor driver BD1 is constituted of one transistor consisting of one collector electrode CBD and two emitter electrodes EBD1 and EBD2. A line address signal conductor AX1 is connected to the collector electrode CBD of the transistor BDTr. The two emitter electrodes EBD1 and EBD2 are provided in such a way that a line address signal outputted from a line address decoder is inputted in the two emitter electrodes EBD1 and EBD2. The transistor BDTr constituting the driver BD1 is basically constituted in the same structure as that of a double emitter transistor constituting a memory cell.